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BC847W [BL Galaxy Electrical]

NPN Silicon Epitaxial Planar Transistor; NPN硅外延平面晶体管
BC847W
型号： BC847W
厂家： BL Galaxy Electrical    BL Galaxy Electrical
描述：

NPN Silicon Epitaxial Planar Transistor
NPN硅外延平面晶体管

晶体 晶体管 光电二极管 IOT
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中文：  中文翻译
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BL Galaxy Electrical  
Production specification  
NPN Silicon Epitaxial Planar Transistor  
BC846W/BC847W/BC848W  
FEATURES  
Pb  
Lead-free  
z
z
z
Low Current.  
Low voltage.  
Power dissipation.(PC=200mW)  
APPLICATIONS  
z
General purpose switching and amplification application.  
SOT-323  
ORDERING INFORMATION  
Type No.  
Marking  
Package Code  
BC846W  
BC847W  
BC848W  
1A/1B  
1E/1F/1G  
1Js/1Ks/1Ls  
SOT-323  
SOT-323  
SOT-323  
MAXIMUM RATING @ Ta=25℃ unless otherwise specified  
Symbol  
Parameter  
Value  
Units  
Collector-Base Voltage  
BC846W  
BC847W  
BC848W  
BC846W  
BC847W  
BC848W  
80  
50  
30  
65  
45  
30  
VCBO  
V
Collector-Emitter Voltage  
Emitter-Base Voltage  
VCEO  
V
BC846W,BC847W  
BC848W  
6
5
VEBO  
V
IC  
Collector Current -Continuous  
Collector Dissipation  
100  
200  
mA  
mW  
℃
PC  
Tj,Tstg  
Junction and Storage Temperature  
-65~150  
Document number: BL/SSSTF045  
Rev.A  
www.galaxycn.com  
1
BL Galaxy Electrical  
Production specification  
NPN Silicon Epitaxial Planar Transistor  
BC846W/BC847W/BC848W  
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified  
Parameter  
Symbol  
Test conditions  
MIN TYP MAX UNIT  
IC=100μA,IE=0  
BC846W  
80  
Collector-base breakdown  
voltage  
V(BR)CBO  
BC847W 50  
BC848W 30  
BC846W 65  
BC847W 45  
BC848W 30  
V
V
V
IC=1mA,IB=0  
Collector-emitter breakdown  
voltage  
V(BR)CEO  
IE=100μA,IC=0  
BC846W  
BC847W  
BC848W  
6
6
5
Emitter-base breakdown  
voltage  
V(BR)EBO  
Collector cut-off current  
Emitter cut-off current  
ICBO  
IEBO  
VCB=30V,IE=0  
VEB=5V,IC=0  
15  
nA  
nA  
100  
VCE=5V,IC=10μA  
BC846AW,BC847AW  
90  
BC846BW,BC847BW,BC848BW 150  
BC847CW,BC848CW  
VCE=2V,IC=100mA  
270  
DC current gain  
hFE  
BC846AW,BC847AW  
110 180  
220  
450  
800  
BC846BW,BC847BW,BC848BW 200 290  
BC847CW,BC848CW  
420 520  
Collector-emitter saturation  
voltage  
VCE(sat)  
VBE(sat)  
IC=10mA, IB= 0.5mA  
90  
250  
mV  
V
Base-emitter saturation  
voltage  
IC=10mA, IB= 0.5mA  
700  
100  
Transition frequency  
Collector capacitance  
fT  
VCE=5V,IC=10mA,f=100MHz  
VCB=10V,IE=0,f=1MHz  
MHz  
pF  
CC  
3
Document number: BL/SSSTF045  
Rev.A  
www.galaxycn.com  
2
BL Galaxy Electrical  
Production specification  
NPN Silicon Epitaxial Planar Transistor  
BC846W/BC847W/BC848W  
PACKAGE OUTLINE  
Plastic surface mounted package  
SOT-323  
SOT-323  
Dim  
A
Min  
1.8  
Max  
2.2  
B
1.15  
1.35  
C
D
E
1.0Typical  
0.15  
0.25  
1.2  
0.35  
0.40  
1.4  
G
H
J
0.02  
0.1  
0.1Typical  
K
2.1  
2.3  
All Dimensions in mm  
PACKAGE INFORMATION  
Device  
Package  
Shipping  
BC846W/BC847W/BC848W SOT-323  
3000/Tape&Reel  
Document number: BL/SSSTF045  
Rev.A  
www.galaxycn.com  
3

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